Download PDF Semiconductor-Device Electronics (The Oxford Series in Electrical and Computer Engineering), by R. M. Warner, B. L. Grung
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Semiconductor-Device Electronics (The Oxford Series in Electrical and Computer Engineering), by R. M. Warner, B. L. Grung
Download PDF Semiconductor-Device Electronics (The Oxford Series in Electrical and Computer Engineering), by R. M. Warner, B. L. Grung
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This clear, student-oriented text is for upper-level or graduate courses covering basic semiconductor physics, physical descriptions of PN-junction diodes, bipolar junction transistors, and MOS Field-effect transistors. The organization is from specific to more general topics with a foundations chapter that reviews critical concepts such as Poisson's Equation, dielectric relaxation, and displacement current. The text progresses toward detailed and often unique coverage: including SPICE modeling of the junction diode, the BJT and MOSFET, ohmic-contact application of the high-low junction, and MOS-capacitance crossover.
- Sales Rank: #3201387 in Books
- Published on: 1995-06-08
- Original language: English
- Number of items: 1
- Dimensions: 9.56" h x 1.62" w x 6.56" l, .70 pounds
- Binding: Hardcover
- 958 pages
About the Author
R. M. Warner is at University of Minnesota.
Most helpful customer reviews
4 of 4 people found the following review helpful.
In-depth treatment of bipolar transistors...
By Steven J. Wojtczuk
Excellent treatment of bipolar junction transistor (BJT) physics in a very tutorial, readable style. Covers many topics in a lucid, intuitive and insightful manner, such as space-charge limited currents, surface recombination velocity, and ohmic contacts, where the discussions are a large cut above other introductory texts. Also covers MOSFETs and PN junctions, but nothing unusual here. There is little information on heterojunctions, optical and microwave devices. Overall, it is the "light" version of an earlier work "Transistors" by Warner and Grung, Wiley, 1983.
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